1EBN1001AEXUMA1

Infineon 1EBN1001AEXUMA1 EiceDRIVER – Single-Channel 15 A High‑Side MOSFET Gate Driver (DSO‑14)

The Infineon Technologies 1EBN1001AEXUMA1 is a member of the EiceDRIVER family of gate drivers, designed to deliver robust, high-current drive for demanding power electronics. With a single high-side channel, configurable inverting/non‑inverting input options, and up to 15 A peak source/sink capability, this device helps designers efficiently switch large MOSFETs in motor drives, DC‑DC power stages, and general high‑current gate drive applications. It comes in a compact SOIC‑14 (150 mil, DSO‑14) package for straightforward surface‑mount assembly and is supplied in tape & reel for automated production.

Engineers evaluating high-side drive options will appreciate the combination of strong peak current and flexible input polarity, enabling faster design iterations and simpler logic interfacing. Sourcing managers and buyers can count on a familiar package, RoHS compliance, and family continuity within Infineon’s established EiceDRIVER portfolio.

Why this part stands out

• High peak gate drive current (15 A) to charge and discharge MOSFET gates quickly.
• Configurable inverting/non‑inverting inputs to match upstream logic without external signal inversion.
• Proven EiceDRIVER ecosystem with board-friendly SOIC‑14 (DSO‑14) footprint.

Key Features and Benefits

• Single-channel high-side MOSFET gate driver
• 15 A peak output current (source/sink)
• Inverting and non-inverting input configuration
• 14‑pin DSO (SOIC‑14, 150 mil) package
• Surface-mount, tape & reel packaging for production
• Part of Infineon’s EiceDRIVER 1EBN series

Benefits for your design:

• Faster switching transitions and reduced switching losses thanks to strong peak drive.
• Input polarity flexibility can eliminate glue logic and simplify firmware/RTL assumptions.
• Common SOIC‑14 body width eases layout and helps with multi-vendor qualification strategies.

Technical Specifications

The following parameters are drawn from the provided part data. Any parameters not listed should be confirmed in the official datasheet for 1EBN1001AEXUMA1.

• Brand / Manufacturer: Infineon Technologies
• Series: EiceDRIVER 1EBN
• Category: Gate Drivers
• Driver Type: High‑side MOSFET gate driver
• Channels: 1
• Peak Output Current: 15 A (source/sink)
• Input Configuration: Inverting and non‑inverting
• Package: SOIC‑14 (150 mil) / DSO‑14
• Pin Count: 14
• Mounting Type: Surface Mount
• Packaging: Tape & Reel (TR)
• RoHS / Environmental: RoHS Compliant
• Lifecycle Status: Not specified in datasheet

Commonly asked—but not specified in the provided data (verify in the datasheet):

• Operating supply voltage range: Not specified in datasheet
• Gate drive voltage capability: Not specified in datasheet
• Propagation delay and rise/fall times: Not specified in datasheet
• UVLO thresholds, fault diagnostics, enable/disable behavior: Not specified in datasheet
• Isolation: Not specified in datasheet
• Operating temperature range and MSL: Not specified in datasheet

Typical Applications

The 1EBN1001AEXUMA1 EiceDRIVER is suitable for a range of high‑side MOSFET drive use cases, including:

• High‑side MOSFET driving in power stages
• Synchronous buck converters and other DC‑DC topologies
• Motor control and general power management
• General‑purpose high‑current gate drive where fast switching is required

The combination of high peak current and flexible input polarity makes it adaptable to both analog and digital control schemes in industrial, commercial, and performance‑oriented consumer systems.

Design and Implementation Notes

The notes below outline general best practices when integrating a high‑current gate driver like the Infineon 1EBN1001AEXUMA1. They are not device‑specific specifications and should be validated against the official datasheet and your application requirements.

Gate resistor selection

• Start with a small series gate resistor to tune switching speed and EMI. Typical starting values for high‑current drivers can range from a few ohms upward, then adjust based on measured switching behavior and thermal margins.
• Consider split resistors (separate turn‑on and turn‑off paths) if you need asymmetric control over rise and fall times.
• Balance switching losses in the MOSFET against electromagnetic emissions and overshoot; higher resistance slows edges and reduces ringing at the cost of increased switching losses.

PCB layout and loop inductance

• Keep the driver-to-gate loop as short as possible to minimize stray inductance and ringing.
• Use a solid ground reference and place high‑frequency decoupling capacitors close to the driver’s supply pins (values and placement details should follow the datasheet recommendations).
• Where possible, use a Kelvin source connection for the MOSFET gate drive return to reduce measurement error and improve switching consistency.

dV/dt robustness and EMI control

• Fast transitions at the switching node can couple into the input/control lines. Route input signals away from the switching node and shield or guard them when necessary.
• If the application exhibits excessive ringing, consider snubbers, ferrite beads in series with the gate, or tuned gate resistors.
• Employ proper gate and power loop partitioning and, if needed, small RC or RCD snubbers to damp high‑frequency oscillations.

Thermal considerations

• Although the driver’s 15 A rating refers to peak gate current (not continuous load current), repeated high‑frequency, high‑current gate switching can heat the device. Verify thermal performance in your end application and ensure adequate copper area for heat spreading.
• Observe any theta‑JA/JC guidance in the official datasheet and follow recommended copper pours for the SOIC‑14 package.

Control logic and input polarity

• The inverting/non‑inverting input flexibility simplifies digital interfacing. Select the mode that aligns with your PWM polarity or safety logic conventions to avoid inversion in firmware/FPGA.
• Maintain clean logic thresholds with appropriate pull‑ups/pull‑downs as recommended by the datasheet, especially in noisy high‑power environments.

Lifecycle, Availability, and Replacements

• Lifecycle status: Not specified in datasheet. Always verify current status directly with Infineon or authorized distributors.
• Availability: The provided dataset indicates an inventory quantity of 0 at the time of compilation. Stock levels change frequently—check the latest availability via authorized channels.
• Replacements and cross‑references: No drop‑in replacements are specified in the provided data. If you require alternates, consult Infineon’s EiceDRIVER portfolio and parametric selection tools to match key parameters (topology, peak/average drive current, supply voltage, input logic, pinout/footprint). Confirm pin compatibility and timing before substituting.

Procurement tip: If your design schedule is sensitive, consider pre‑qualifying more than one gate driver option with compatible packages and similar peak current capability to mitigate supply fluctuations.

Compliance and Environmental Information

• RoHS Status: RoHS Compliant (per provided data). For official compliance information, refer to Infineon’s environmental standards page below.
• Additional compliance documentation: See Infineon’s RoHS/REACH resources for the most current declarations. Specific material composition and MSL information were not provided and should be confirmed in the device datasheet and product statements.

Resources:

• Environmental/Compliance: https://www.infineon.com/cms/en/about-infineon/environmental-standards/rohs-reach/

Packaging, Handling, and Storage

• Package: SOIC‑14 (150 mil body width) / DSO‑14
• Packaging format: Tape & Reel (TR)
• Mounting: Surface mount technology (SMT)

Handling recommendations:

• Treat the device as ESD‑sensitive; follow standard ESD precautions during handling and assembly.
• Moisture Sensitivity Level (MSL): Not specified in datasheet. Store per standard SMT component practices (dry pack where applicable) and follow reflow guidelines from the official datasheet.

Integration in Common Topologies

While exact electrical limits and timing should be taken from the official datasheet, the 1EBN1001AEXUMA1’s feature set enables use in many standard configurations:

• Synchronous buck converters: High‑side MOSFET drive capability and strong peak current help reduce switching losses, especially at higher currents and faster switching nodes.
• Motor control bridges: Use as a high‑side driver in half‑bridge or multi‑phase arrangements where fast transitions and clean gate charge profiles are crucial for efficiency and thermal control.
• General power stages: Any application demanding rapid charging/discharging of large gate capacitances can benefit from a 15 A peak driver.

When evaluating switching behavior, measure MOSFET drain waveforms, gate voltages, and driver supply rails across duty cycle, load, and temperature. Adjust gate resistors and add snubbers as needed to meet EMI and efficiency targets.

Sourcing Checklist for Buyers and Engineers

• Confirm the exact MPN: Infineon 1EBN1001AEXUMA1 (EiceDRIVER 1EBN series)
• Verify package: DSO‑14 / SOIC‑14 (150 mil), surface mount
• Check peak drive current requirement vs. your MOSFET’s total gate charge and target switching frequency
• Validate input polarity needs (inverting or non‑inverting) against your PWM/control scheme
• Review RoHS documentation and any additional compliance requirements for your region or market
• Cross‑check lifecycle status and current stock with authorized distributors
• Ensure layout and thermal budget accommodate a high‑current gate driver

Frequently Asked Questions (FAQs)

Q: Is the input configurable for inverting or non‑inverting operation?
A: Yes. The 1EBN1001AEXUMA1 supports both inverting and non‑inverting input configurations.

Q: What is the package type?
A: 14‑pin DSO (SOIC‑14, 150 mil body width), suitable for surface mounting.

Q: What is the peak gate drive current?
A: Up to 15 A peak (source/sink), per the provided part data.

Q: Is this an isolated gate driver?
A: Not specified in datasheet. Refer to the official product documentation for isolation details, if any.

Q: What supply voltage range does the driver require?
A: Not specified in datasheet. Check the official 1EBN1001AEXUMA1 datasheet for VDD/VCC limits and UVLO thresholds.

Q: Is it suitable for SiC or GaN devices?
A: Not specified in datasheet. Compatibility depends on gate voltage range, dV/dt robustness, and recommended driving practices—verify in the device datasheet and with your switch vendor’s guidance.

Q: What is the mounting type and how is it supplied?
A: Surface mount device (SMD), supplied in Tape & Reel (TR).

Q: Are there pin‑compatible alternatives?
A: Not specified in the provided data. Consult Infineon’s EiceDRIVER portfolio and confirm pinout and timing before using a substitute.

Resources

• Product Page (Authorized Distributor): https://www.mouser.com/ProductDetail/Infineon-Technologies/1EBN1001AEXUMA1
• EiceDRIVER Family Overview (Datasheet Portal): https://www.infineon.com/cms/en/product/power/gate-driver-ics/eicedriver/
• Environmental & Compliance: https://www.infineon.com/cms/en/about-infineon/environmental-standards/rohs-reach/

Note: Some parameters could not be verified from a specific part‑number datasheet at the time of compilation. When possible, replace generic links with the official 1EBN1001AEXUMA1 datasheet from Infineon or an authorized distributor, and verify all critical limits before freezing your design.