CSD17382F4

Texas Instruments CSD17382F4 FemtoFET MOSFET — 20-V N‑channel, 4‑bump DSBGA (Chip‑Scale)

A compact, surface‑mount N‑channel MOSFET designed for low‑voltage switching in space‑constrained designs. Texas Instruments’ CSD17382F4 belongs to the FemtoFET family and comes in an ultra‑small 4‑bump DSBGA package, ideal for dense portable and battery‑powered systems.

• Brand/Manufacturer: Texas Instruments
• MPN: CSD17382F4
• Series: FemtoFET
• Category: Transistors — MOSFETs, Single

Why design in the Texas Instruments CSD17382F4?

Engineers building ultra‑compact, low‑voltage switching stages often need a tiny footprint, low parasitic package with minimal conduction and switching losses. While every design’s numbers differ, TI’s FemtoFET line is known for chip‑scale packages that minimize loop inductance and board area. The CSD17382F4 fits that role with a 20‑V drain‑to‑source rating in a 4‑bump DSBGA, making it a strong candidate for:

• Load switching for low‑voltage rails in handheld or battery‑powered devices
• Power path selection and distribution near point‑of‑load regulators
• High‑density sensor modules and wearables where board space is at a premium
• General low‑voltage N‑channel MOSFET applications that benefit from minimal package size

Because it is a chip‑scale device, the package helps reduce interconnect resistance and inductance versus larger leaded options, supporting cleaner switching edges and improved efficiency in appropriately designed circuits.

Key features at a glance

• N‑channel MOSFET, single configuration
• 20‑V maximum drain‑to‑source voltage (Vds)
• Ultra‑compact 4‑bump DSBGA (chip‑scale) package
• Surface‑mount mounting for dense PCBs and modules
• Part of TI’s FemtoFET family for space‑ and efficiency‑focused designs

Detailed specifications

The following parameters are confirmed from the provided data. Any values not listed were not confirmed in this session and should be taken from the official datasheet.

• Manufacturer: Texas Instruments
• Series: FemtoFET
• Device type: Discrete power MOSFET
• FET type: N‑Channel
• Configuration: Single
• Drain‑to‑Source Voltage (Vds): 20 V (max)
• Package: DSBGA‑4 (chip‑scale), 4 bumps
• Mounting type: Surface Mount
• Pin count: 4
• Category: Transistors — MOSFETs, Single

Not specified in datasheet (in this session; consult TI datasheet):

• On‑resistance (Rds(on))
• Continuous drain current (Id)
• Gate threshold voltage (Vgs(th))
• Total gate charge (Qg)
• Body diode characteristics
• Safe operating area (SOA)
• Operating junction/storage temperature ranges
• Thermal metrics (RθJA, RθJC)
• ESD robustness

Where the CSD17382F4 excels

Ultra‑small footprint for portable electronics

The 4‑bump DSBGA package minimizes land pattern area, allowing designers to place the switch very close to the load or regulator. This reduces trace length, resistance, and parasitics—beneficial for high‑efficiency, low‑voltage rails.

Low parasitics and tight power loops

Chip‑scale packages typically offer lower package inductance and resistance compared with larger molded or leaded packages. When paired with careful layout, this can improve transient behavior and reduce ringing.

Simplified power path control

With a 20‑V rating, the device is suited for common low‑voltage system rails. It can serve as a load switch, reverse‑blocking element when arranged appropriately with a controller, or a high‑side/low‑side element in small DC switches (verify topology, gate drive, and ratings from the datasheet).

Typical applications

• Smartphones, tablets, wearables, and IoT nodes
• Sensor power gating and subsystem isolation in low‑power embedded designs
• Point‑of‑load power distribution and sequencing
• Battery‑powered handheld instruments and medical portables
• Space‑limited modules that need a discrete N‑channel switch

Note: Always validate voltage, current, thermal, and SOA requirements against the datasheet before deployment.

Package and PCB design guidance

While the CSD17382F4’s chip‑scale package saves space, it requires disciplined PCB design and assembly practices.

Land pattern and assembly

• Follow TI’s recommended land pattern, solder mask openings, and stencil thickness from the datasheet for consistent reflow results.
• Use accurate pick‑and‑place alignment and an optimized reflow profile to avoid solder bridging or voiding on the micro‑bumps.
• Avoid manual soldering; chip‑scale devices are intended for automated assembly.

Layout considerations

• Place the MOSFET as close as practical to the load and controller or driver to minimize loop area.
• Keep high‑di/dt current paths short and wide; ensure low‑impedance return paths to reduce EMI and ringing.
• Observe clearances between bumps and adjacent copper to meet fabrication tolerances.

Thermal considerations

• Even small MOSFETs dissipate heat under load. Use short, wide copper connections, and consider thermal spreading copper under and around the device consistent with the datasheet guidance.
• Validate temperature rise under worst‑case load, ambient, and airflow conditions in your end equipment.

Handling and reliability

• Treat the MOSFET as an ESD‑sensitive device; follow standard ESD precautions in storage, handling, and assembly.
• Inspect solder joints with appropriate optical or X‑ray processes as applicable to your quality requirements.

Design checklist for first‑pass success

• Confirm Vds margin: 20 V max; ensure sufficient headroom above the highest possible drain‑source stress.
• Gate drive: Verify that your controller’s Vgs swing meets the device’s recommended operating conditions (consult datasheet for limits).
• Losses: Estimate conduction and switching losses. Insert the correct Rds(on) and Qg values from the datasheet into your calculations.
• Transients and protection: Assess load dump, hot‑plug, and inductive kick behavior; add snubbers, clamps, or TVS diodes as required.
• Thermal: Model worst‑case power dissipation and ensure adequate copper for heat spreading.
• Test: Characterize performance in corner conditions (min/max supply, temperature, tolerances) and validate SOA.

Sourcing, lifecycle, and planning

• Lifecycle status: Not specified in datasheet. Check the TI product page for the latest lifecycle state and recommended replacements if any changes occur.
• Inventory: Current inventory in this feed shows 0 units. For builds, plan lead time and consider multi‑source strategies if program risk warrants it.
• Replacements/alternatives: Not specified in datasheet. If a drop‑in alternative is required, explore other Texas Instruments FemtoFET N‑channel devices with matching package, Vds, Rds(on), and pinout. Always verify electrical, thermal, and mechanical compatibility before substitution.

Procurement tips:

• Lock the exact ordering code and package option (DSBGA‑4) into your AVL/BOM to avoid pack/finish substitutions.
• Capture the datasheet revision used for qualification and monitor TI PCN/PDN notices for changes.

Compliance and documentation

• RoHS/Environmental status: Not specified in datasheet. Request the latest RoHS/REACH declarations or CoC from TI or your distributor.
• Conflict minerals and environmental policies: Refer to TI’s corporate compliance pages and product‑specific documents.
• Quality and reliability data: For automotive or safety‑critical use, consult TI for AEC‑Q or enhanced documentation as applicable (not specified here).

Frequently asked questions (FAQs)

Q: What is the core device type of the Texas Instruments CSD17382F4?
A: It is a single N‑channel MOSFET in TI’s FemtoFET series.

Q: What is the maximum drain‑to‑source voltage (Vds)?
A: 20 V (max), per the provided specifications.

Q: What package does the CSD17382F4 use?
A: A 4‑bump DSBGA (chip‑scale) package designed for surface‑mount assembly.

Q: Is the on‑resistance (Rds(on)) specified here?
A: Not specified in datasheet (in this session). Refer to the TI datasheet for exact values at relevant Vgs and temperature.

Q: What is the continuous drain current rating (Id)?
A: Not specified in datasheet (in this session). Please consult the official datasheet.

Q: Is the device RoHS compliant?
A: Not specified in datasheet (in this session). Check the TI product page or request compliance documentation.

Q: Are drop‑in replacements available?
A: Not specified in datasheet. Evaluate other TI FemtoFET N‑channel devices as potential alternatives, verifying Vds, Rds(on), package, pinout, and SOA.

Q: Where can I find the pin assignment and recommended land pattern?
A: In the TI datasheet for CSD17382F4. Always follow the manufacturer’s latest recommendations.

How to compare FemtoFET options from TI

When choosing among FemtoFET devices, align the following with your design targets:

• Voltage rating: Ensure Vds comfortably exceeds worst‑case system voltages and transients.
• Current and SOA: Match Id and SOA to your load profile, including surge and fault conditions.
• Rds(on): Lower on‑resistance reduces conduction losses; compare at the same Vgs and temperature.
• Gate charge/switching: Lower Qg can reduce gate drive losses and improve transient response.
• Package and pinout: Verify DSBGA bump layout compatibility for footprint reuse.
• Thermal metrics: Confirm junction temperature rise in your thermal model and hardware tests.

Summary

The Texas Instruments CSD17382F4 is a compact, 20‑V N‑channel MOSFET in a 4‑bump DSBGA package tailored for tight spaces and efficient low‑voltage switching. As part of the FemtoFET family, it brings chip‑scale benefits—reduced parasitics and minimal board area—to portable and high‑density designs. For exact electrical limits and performance, refer to the official TI datasheet and validate the device in your target operating conditions.

Resources

• Product page: https://www.ti.com/product/CSD17382F4
• Datasheet: https://www.ti.com/lit/ds/symlink/csd17382f4.pdf