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FDMC510P

Single P-Channel 20 V 17 mOhm 116 nC 41 W PowerTrench SMT Mosfet – MLP-3.3×3.3

Manufacturer

ONSEMI

Mrf. Part #

FDMC510P

Package

Key Attributes

Datasheet

Products Specifications

onsemi FDMC510P PowerTrench P‑Channel MOSFET (−20 V, 17 mΩ) — Compact High‑Side Switch for Power Management

The onsemi FDMC510P is a single P‑channel PowerTrench MOSFET designed for efficient high‑side switching and compact power management. Housed in an MLP 3.3 × 3.3 mm (Power33) 8‑lead package, it blends low RDS(on), robust power handling, and a small footprint—an attractive mix for DC‑DC converters, battery‑powered devices, and space‑constrained boards.

Engineers selecting a −20 V P‑channel MOSFET for high‑side load switching will appreciate the FDMC510P’s 17 mΩ RDS(on) and fast switching characteristics (Qg = 116 nC), while sourcing teams benefit from a popular package and onsemi’s PowerTrench process pedigree.

Highlights and Value Proposition

  • MPN and brand: onsemi FDMC510P (PowerTrench series)
  • Topology: Single P‑channel MOSFET for high‑side use
  • Voltage class: −20 V VDS for low‑to‑mid voltage rails (e.g., 1S–3S battery systems and 5–12 V rails, subject to design limits)
  • Low conduction loss: 17 mΩ RDS(on) reduces I²R heating at moderate currents
  • Fast switching: 116 nC total gate charge (Qg) supports efficient switching with capable drivers
  • Power handling: 41 W PD (per provided data; depends strongly on thermal conditions and layout)
  • Compact, surface‑mount: MLP 3.3 × 3.3 mm (Power33), 8‑lead
  • Applications: High‑side load switching, DC‑DC converter elements, battery devices, and general power management

Why it matters: The FDMC510P brings a practical balance of on‑resistance, switching charge, and size—key levers for minimizing loss and meeting thermal budgets in dense designs. Using a P‑channel device on the high side simplifies gate drive for many low‑voltage systems.

Detailed Specifications

Electrical parameters

  • Transistor type: P‑Channel
  • Drain‑to‑Source Voltage (VDS): −20 V
  • On‑Resistance (RDS(on)): 17 mΩ (test conditions not specified; verify in datasheet)
  • Total Gate Charge (Qg): 116 nC (test conditions not specified; verify in datasheet)
  • Power Dissipation (PD): 41 W (conditions/layout dependent; verify in datasheet)
  • Configuration: Single MOSFET
  • Technology: PowerTrench

Notes:

  • Some limits (e.g., continuous drain current, gate‑source maximum, body diode characteristics, RDS(on) test points) are not specified here and should be confirmed in the official datasheet before finalizing your design.

Package and mechanical

  • Package: MLP 3.3 × 3.3 mm (Power33), 8‑Lead
  • Mounting: Surface Mount
  • Pin count: 8
  • Moisture sensitivity level (MSL): Not specified in datasheet (check ordering information)
  • RoHS/REACH: Not specified in datasheet (verify compliance documentation)

Resource: Datasheet — https://www.onsemi.com/pdf/datasheet/fdmc510p-d.pdf

Typical Applications and Use Cases

  • High‑side load switching in portable and embedded systems
  • DC‑DC converter switching elements (e.g., load path control, OR‑ing, or synchronous roles when appropriate)
  • Battery‑powered equipment where efficiency and board area are critical
  • General power management: power gating, subsystem isolation, hot‑swap assist circuits (as appropriate to ratings)

P‑channel high‑side advantage: For many low‑voltage rails, a P‑channel MOSFET can be driven directly from logic or a simple driver referenced to the source, easing design compared to N‑channel alternatives that often require a boosted gate drive above the rail.

Design Considerations and Engineering Tips

  • Gate drive strategy: As a P‑channel device, the FDMC510P turns on with a negative VGS relative to its source. Ensure your controller or driver can reliably generate the needed VGS over all conditions. Maximum VGS, threshold, and recommended operating VGS are not listed here—confirm in the datasheet and keep sufficient margin.
  • Switching losses: Gate drive loss scales with Qg and frequency. A quick estimate for gate‑drive power is Pgate ≈ Qg × Vdrive × f. For example, with Qg = 116 nC, a 5 V gate swing, and 100 kHz switching, Pgate ≈ 0.058 W. This does not include transition/overlap losses, which depend on load current and rise/fall times.
  • Conduction losses: Pcond ≈ I² × RDS(on). Lower RDS(on) directly reduces copper losses and self‑heating, particularly important in small packages. Use worst‑case RDS(on) at your operating temperature from the datasheet.
  • Thermal management: The stated 41 W PD is layout‑ and environment‑dependent. In small DFN/MLP footprints, copper area and thermal vias dominate thermal performance. Use generous copper connected to the primary heat‑spreading pad and follow onsemi’s land pattern guidelines. Always validate with thermal measurements.
  • SOA and transients: Check the Safe Operating Area (SOA) and avalanche/UIS ratings in the datasheet for pulsed loads, hot‑plug events, or inductive switching. Add snubbers or clamp diodes where appropriate.
  • Reverse conduction: Body diode behavior (VF, reverse recovery) is not detailed here; review datasheet graphs and consider external diodes for sensitive paths.
  • ESD and handling: Observe MSL and ESD precautions. Verify storage/handling per package guidelines to avoid moisture‑induced soldering defects.

How the FDMC510P Compares When You’re Selecting Alternatives

When cross‑checking parts, align the following parameters to minimize redesign:

  • VDS rating: Must meet or exceed your worst‑case rail and transient conditions with margin.
  • RDS(on): Match or improve at your intended VGS and temperature; note that some datasheets define RDS(on) at multiple gate voltages.
  • Qg and switching: Lower Qg eases the burden on gate drivers and reduces switching/drive losses, but balance against RDS(on).
  • Package and pinout: Seek MLP/DFN 3.3 × 3.3 mm, 8‑lead devices with compatible pinouts. Thermal pad connectivity is often to the drain—confirm before routing.
  • Power/thermal: Compare PD, junction‑to‑ambient/case thermal impedance, and recommended PCB copper for fair apples‑to‑apples assessments.
  • Secondary specs: Gate threshold, maximum VGS, body diode metrics, SOA, and avalanche ratings can be design‑critical—always verify.

Lifecycle, Availability, and Sourcing Guidance

  • Lifecycle status: Not specified in datasheet. Check the onsemi product page or authorized distributor listings for current lifecycle information.
  • Stock position: Current provided inventory quantity is 0. Availability fluctuates; plan for lead time and consider approved alternates to mitigate risk.
  • Orderable information: Specific order codes, tape‑and‑reel quantities, and packing details are not specified here. Refer to the datasheet and onsemi’s ordering tables.
  • Sourcing tips:
  • Use onsemi’s parametric search to identify pin‑compatible P‑channel PowerTrench devices in the same voltage class and package.
  • Qualify at least one second source if your design is production‑critical. Match VDS, RDS(on) at your VGS, Qg, package, and pinout.
  • Lock down compliance requirements (RoHS/REACH, potential AEC‑Q101 needs) before final part approval.

Compliance and Quality

  • RoHS/Environmental: Not specified in datasheet (verify with onsemi documentation or distributor certificates)
  • AEC‑Q101 automotive qualification: Not specified in datasheet
  • Halogen‑free status: Not specified in datasheet

If your program has strict compliance gates, request the latest declarations from onsemi and retain certificates in your PPAP/document control system.

Layout and Assembly Best Practices

  • Land pattern: Follow the manufacturer’s recommended footprint for the MLP 3.3 × 3.3 (Power33) package to achieve target thermal and electrical performance.
  • Thermal pad: If the package provides an exposed thermal pad (common in Power33/DFN styles), it is typically connected to the drain. Confirm in the pinout diagram and connect to a copper pour sized for heat spreading. Use multiple thermal vias to inner/outer planes as appropriate.
  • Current path minimization: Keep source and drain current loops short and wide to reduce resistive and inductive losses. Place decoupling close to the load path.
  • Gate routing: Keep the gate trace short, avoid coupling to noisy nets, and consider a series gate resistor to damp ringing. Provide a strong pull‑up/pull‑down path to define off/on states.
  • Reflow and MSL: Verify MSL level and baking requirements from the datasheet/packaging notes to avoid voids or popcorning.

Specifications Summary (At a Glance)

  • Brand/Manufacturer: onsemi
  • Series/Technology: PowerTrench
  • MPN: FDMC510P
  • Category: Discrete Semiconductors > MOSFETs > P‑Channel (Single)
  • VDS: −20 V
  • RDS(on): 17 mΩ
  • Total Gate Charge (Qg): 116 nC
  • Power Dissipation (PD): 41 W
  • Configuration: Single P‑channel MOSFET
  • Package: MLP 3.3 × 3.3 mm (Power33), 8‑Lead
  • Mounting: Surface Mount
  • Pin Count: 8
  • Lifecycle status: Not specified in datasheet
  • RoHS/Environmental: Not specified in datasheet

Frequently Asked Questions (FAQs)

  • What is the voltage rating of the onsemi FDMC510P?

  • The FDMC510P is rated at −20 V drain‑to‑source (VDS).

  • How low is the on‑resistance?

  • RDS(on) is specified as 17 mΩ. Check the datasheet for the exact test conditions and temperature coefficients relevant to your design.

  • What is the total gate charge?

  • Qg is 116 nC (conditions not specified here; consult the datasheet for the VGS and measurement details).

  • What package does the FDMC510P use?

  • It comes in an MLP 3.3 × 3.3 mm (Power33), 8‑lead surface‑mount package.

  • Can I use the FDMC510P for high‑side switching in a 12 V system?

  • The −20 V VDS rating can be compatible with many 12 V systems, but you must validate gate‑drive limits (maximum VGS), transient margins, and thermal performance from the datasheet.

  • Is the FDMC510P RoHS compliant or AEC‑Q101 qualified?

  • Not specified in the provided data. Verify with onsemi’s official documentation.

  • Are there drop‑in replacements?

  • Specific cross‑references are not provided here. Consider other onsemi PowerTrench P‑channel MOSFETs in the same package and voltage class, but always confirm pinout and ratings.

Resources

  • Datasheet: https://www.onsemi.com/pdf/datasheet/fdmc510p-d.pdf
  • Product page: Not specified in datasheet (search “onsemi FDMC510P” on onsemi.com)

Final Notes

  • Some parameters (test conditions, exact ratings) should be confirmed against the official datasheet for your design limits. Deratings over temperature and PCB thermal assumptions can materially affect current capability and reliability.
  • For sourcing, if the FDMC510P is constrained, maintain at least one vetted alternate with equivalent VDS, RDS(on) at your VGS, Qg, thermal performance, and the same package/pinout to minimize redesign risk.
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