IPD30N06S2L23ATMA3

Infineon IPD30N06S2L23ATMA3 N-channel Power MOSFET — 55 V, 30 A, DPAK (TO-252-3)

The Infineon IPD30N06S2L23ATMA3 is an N-channel power MOSFET designed for efficient switching in 55 V class applications. With a low 15.9 mΩ RDS(on) specified at VGS = 10 V, a continuous drain current rating of 30 A, and a compact DPAK (TO-252-3) package, it fits a wide range of high-current, space-constrained designs. Engineers value its logic-level gate drive capability and robust package for reliable performance in load switching, motor drives, and power conversion stages.

This page consolidates the essential technical facts and sourcing guidance for Infineon’s IPD30N06S2L23ATMA3 so you can evaluate fit, plan your BOM, and move to procurement with fewer back-and-forth iterations.

At a Glance

• Brand / Manufacturer: Infineon Technologies AG
• MPN: IPD30N06S2L23ATMA3
• Category: Transistors – MOSFETs, Single
• Transistor Type: N-Channel
• Drain-to-Source Voltage (VDS): 55 V
• Continuous Drain Current (ID): 30 A
• RDS(on) @ VGS: 15.9 mΩ @ 10 V
• Gate Threshold Voltage (VGS(th)): 1.6 V
• Package / Case: DPAK (TO-252-3)
• Mounting Type: Surface Mount
• Pin Count: 3
• Datasheet: https://media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/IPD30N06S2L-23.pdf

Note on naming: the orderable code IPD30N06S2L23ATMA3 corresponds to the IPD30N06S2L-23 family designation indicated in the datasheet. Suffixes typically denote packaging/ordering options; verify exact ordering code details against the datasheet and distributor listings.

Key Features and Benefits

• Low conduction losses: 15.9 mΩ RDS(on) at VGS = 10 V helps minimize I²R losses in high-current paths, improving efficiency and thermal headroom.
• 55 V drain-to-source rating: Suitable for 24–48 V rails with margin for transients when properly protected.
• 30 A continuous drain current: Supports substantial load currents in compact power stages.
• Logic-level gate drive capability: Works with logic-level drive; confirm your chosen VGS against the datasheet’s RDS(on) and transfer characteristics to ensure adequate conduction.
• DPAK (TO-252-3) footprint: Ubiquitous, surface-mount power package that balances thermal performance and PCB area.
• Simple, rugged topology: N-channel device with straightforward integration for low-side switching and, with an appropriate driver, high-side implementations.

Detailed Specifications

Electrical Ratings

• Drain-to-Source Voltage (VDS): 55 V
• Continuous Drain Current (ID): 30 A
• RDS(on): 15.9 mΩ at VGS = 10 V
• Gate Threshold Voltage (VGS(th)): 1.6 V

The following common parameters are not provided here and should be confirmed in the official datasheet for your design calculations:

• Total Gate Charge (Qg): Not specified in datasheet here.
• Gate-Source Voltage (VGS, max): Not specified in datasheet here.
• Avalanche energy/current or UIS ratings: Not specified in datasheet here.
• Safe Operating Area (SOA): Not specified in datasheet here.
• Thermal resistance (RθJC, RθJA) and power dissipation: Not specified in datasheet here.

Mechanical and Packaging

• Package / Case: DPAK (TO-252-3)
• Mounting: Surface Mount
• Pin Count: 3
• Package suffix “ATMA3”: Commonly indicates an ordering/packaging variant. Confirm tape-and-reel or other packing format and any suffix-specific details with the datasheet and distributor before ordering.

Typical Applications

The Infineon IPD30N06S2L23ATMA3 is suitable for a broad set of power switching tasks in the 55 V class:

• Low-side load switching for motors, heaters, lamps, solenoids, and valves
• Half-bridge/Full-bridge stages when paired appropriately (e.g., motor control)
• Power distribution and high-side switching when driven with a suitable high-side gate driver
• DC power conversion stages as a primary switch (topology dependent and subject to appropriate gate drive and thermal design)
• LED lighting power switches and dimming stages (low-side)
• Battery-powered equipment and 24–48 V industrial rails where efficiency and compact layout are priorities

Always verify switching losses, thermal performance, and transient margins for your specific use case.

Design and Implementation Notes

Gate Drive Considerations

• Logic-level capability: The device is described as supporting logic-level gate drive. However, the guaranteed RDS(on) provided here is specified at VGS = 10 V. If you intend to drive the gate at 4.5–5 V or any lower level, consult the datasheet’s RDS(on) vs. VGS curves and transfer characteristics to ensure adequate conduction margin.
• Gate resistor: A small series gate resistor can help control ringing and dv/dt-induced switching behavior. Tune during validation to balance switching speed and EMI.
• Gate-source protection: Respect the absolute maximum VGS rating (not listed here). Consider adding a gate-source Zener clamp or ensure the driver keeps VGS within limits under all conditions.

Thermal Management

• DPAK layout: The copper pad connected to the drain tab is your primary heat-spreading area. Increase copper area and consider thermal vias to inner planes or backside copper to reduce thermal resistance.
• Power dissipation: Estimate conduction losses using Pcond ≈ I² × RDS(on) at the actual operating temperature and gate drive. Add switching losses from your operating frequency, gate charge, and voltage/current waveforms.
• Validation: Measure case and board temperatures under worst-case load, ambient, and airflow to confirm margins. If RθJC/RθJA and maximum power dissipation are needed, obtain them from the datasheet.

Protection and Reliability

• Transients: For inductive loads, include flyback diodes or snubber networks as appropriate. For supply-line transients, consider TVS clamps to keep VDS within limit.
• SOA adherence: Ensure operation stays within the Safe Operating Area across start-up, short-circuit, braking, or fault events. Confirm with datasheet SOA curves.
• Body diode: N-channel power MOSFETs include an intrinsic body diode. Review reverse-recovery characteristics in the datasheet if diode conduction is expected in your design.

Layout Tips

• Keep high di/dt loops short and compact to reduce EMI and overshoot.
• Provide a solid, low-impedance return path for source current; avoid shared inductance between power and signal returns.
• Separate the gate drive trace from noisy power nodes; add a local gate-to-source resistor to ensure a known off-state.
• If measuring current via shunt, avoid routing sense traces through high-current copper to minimize error.

Lifecycle, Availability, and Sourcing

• Lifecycle Status: Not specified in datasheet here. Check Infineon’s product page or authorized distributor listings for current status.
• Inventory: Current inventory shown here is 0. Lead time and stock vary by distributor; check real-time availability.
• Pricing: No pricing shown; consult distributors for current pricing and availability.
• Ordering codes: The IPD30N06S2L23ATMA3 designation aligns with the IPD30N06S2L-23 family. Suffixes typically indicate packaging or shipment format. Verify the exact orderable code, packing quantity, and RoHS marking before purchase.

Sourcing tips:

• Use authorized distributors to ensure traceability and up-to-date compliance documentation.
• If your application is lifecycle-sensitive, request a PCN/EOL watch or consider a dual-source strategy with a form/fit/function-compatible alternative.
• For production, lock down the full orderable code (including suffix) on the BOM and AVL to avoid packing or variant mismatches.

Compliance and Environmental

• RoHS / Environmental Status: Not specified in datasheet here. Obtain the latest RoHS and substance declarations directly from Infineon or authorized distributors.
• Halogen-free / REACH: Not specified in datasheet here.
• Automotive/AEC-Q: Not specified in datasheet here. If automotive qualification is required, verify AEC-Q status and PPAP availability explicitly.

Keep compliance certificates with your device history record (DHR) and supplier quality files, especially for regulated markets.

Selecting Replacements or Alternatives

When evaluating second sources or drop-in alternatives, focus on the following attributes to match the Infineon IPD30N06S2L23ATMA3:

• Voltage class: 55 V (or higher with appropriate derating margins)
• On-resistance: Target ≤20 mΩ at the same VGS test condition (10 V) for similar conduction losses
• Current rating: Comparable or higher continuous ID in the same package class
• Package and pinout: DPAK (TO-252-3) with the same footprint/pin assignment
• Dynamic parameters: Confirm gate charge, reverse-recovery, and switching performance suitable for your frequency and topology (datasheet required)
• Thermal metrics: Ensure RθJC/RθJA and maximum power dissipation meet your thermal budget

Always verify SOA, absolute maximum ratings, and pin compatibility before approving any alternate.

Frequently Asked Questions (FAQs)

• What is the brand and MPN?
  Infineon Technologies AG, IPD30N06S2L23ATMA3.

• What is the drain-to-source voltage rating?
  55 V.

• How much current can it handle continuously?
  30 A (continuous drain current).

• What is the on-resistance?
  15.9 mΩ at VGS = 10 V.

• Is it a logic-level MOSFET?
  The device is described as having logic-level gate drive capability. Verify RDS(on) vs. VGS in the datasheet for your intended gate voltage (e.g., 4.5–5 V) to confirm conduction margin.

• What is the package and mounting style?
  DPAK (TO-252-3), Surface Mount.

• How many pins does it have?
  3 pins.

• Is it RoHS compliant?
  Not specified in datasheet here. Obtain the latest compliance statement from Infineon or authorized distributors.

• Is it AEC-Q qualified for automotive use?
  Not specified in datasheet here.

• Can I use it for high-side switching?
  Yes, with an appropriate high-side gate driver that can provide the required VGS relative to the source. Ensure all absolute maximums are respected.

• Does it include a body diode?
  As with typical N-channel power MOSFETs, an intrinsic body diode is present; confirm diode characteristics in the datasheet if it will conduct in your application.

• Where can I find more technical details?
  Refer to the datasheet linked below and authorized distributor product pages.

Resources

• Datasheet: https://media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/IPD30N06S2L-23.pdf
• Authorized distributor listings: Check franchised distributors for live inventory, compliance documentation, and orderable code details.

By focusing on the essential facts—55 V VDS, 30 A ID, and 15.9 mΩ RDS(on) in a proven DPAK package—the Infineon IPD30N06S2L23ATMA3 provides a practical, efficient building block for industrial and embedded power switching. Use the guidance above to confirm design fit, lock down the exact orderable, and streamline sourcing for production.