IPP65R110CFDAAKSA1

Infineon Technologies IPP65R110CFDAAKSA1 — CoolMOS CFD7A Automotive 650 V N‑Channel MOSFET (TO‑220‑3)

Infineon Technologies’ IPP65R110CFDAAKSA1 is an automotive‑grade, superjunction N‑channel MOSFET from the CoolMOS CFD7A family. With a 650 V drain‑to‑source rating, 31.2 A continuous drain current, and a low 110 mΩ typical Rds(on), this device is engineered for efficiency and robustness in high‑voltage automotive power conversion. The fast body diode (CFD) architecture makes it a strong fit for hard‑commutation stages often encountered in on‑board chargers (OBC), high‑voltage DC‑DC converters, power factor correction (PFC) front ends, and auxiliary supplies. Housed in a through‑hole TO‑220‑3 (3 leads + tab) package and AEC‑Q101 qualified, the IPP65R110CFDAAKSA1 targets long‑life, reliable operation under harsh automotive conditions.

Why engineers choose the Infineon IPP65R110CFDAAKSA1

• 650 V superjunction MOSFET headroom for automotive HV buses and PFC stages
• 31.2 A continuous drain current capability for robust power handling
• 110 mΩ Rds(on) for reduced conduction losses
• CoolMOS CFD7A technology with a fast body diode for hard‑commutation resilience
• AEC‑Q101 qualification supporting automotive reliability requirements
• Proven TO‑220‑3 package for easy heatsinking and serviceability

Key Features and Value Proposition

• Infineon Technologies CoolMOS CFD7A platform: Optimized for high‑voltage, high‑efficiency switching in automotive environments.
• 650 V drain‑to‑source rating (Vds): Provides margin for transient conditions typical in OBC and PFC topologies.
• 31.2 A continuous drain current (Id): Supports substantial load currents when properly cooled and designed.
• 110 mΩ on‑resistance (Rds(on)): Helps lower conduction losses and thermal stress.
• Fast body diode (CFD): Aids in reducing reverse‑recovery losses and current spikes under hard commutation.
• AEC‑Q101 qualified: Meets automotive stress testing and reliability expectations.
• Through‑hole TO‑220‑3 package: Simplifies prototyping, repairability, and thermal interface to heatsinks.
• RoHS compliant: Supports environmentally responsible designs and global compliance.

Detailed Specifications

The following parameters are specified from the provided manufacturer data. Where certain details are not available here, consult the official datasheet for design limits and test conditions.

• Manufacturer/Brand: Infineon Technologies (Infineon Technologies AG)
• Series: CoolMOS CFD7A Automotive
• MPN: IPP65R110CFDAAKSA1
• Technology: Superjunction (CoolMOS)
• Channel Type: N‑Channel
• Configuration: Single
• Drain‑to‑Source Voltage (Vds): 650 V
• Continuous Drain Current (Id): 31.2 A
• On‑Resistance (Rds(on)): 110 mΩ
• Body Diode: Fast body diode (CFD)
• Qualification: AEC‑Q101
• Package/Case: TO‑220‑3 (3 leads + tab)
• Mounting Type: Through Hole
• Packaging: Tube
• Pin Count: 3
• Category: Discrete Semiconductors > MOSFETs > N‑Channel (Single)

Parameters not specified in the provided data (refer to datasheet):

• Gate‑source voltage limits (Vgs max): Not specified in datasheet
• Gate threshold voltage (Vgs(th)): Not specified in datasheet
• Gate charge (Qg), input capacitance (Ciss), output capacitance (Coss), reverse recovery charge/time: Not specified in datasheet
• Avalanche energy ratings (EAS), repetitive avalanche: Not specified in datasheet
• Safe operating area (SOA) curves and derating: Not specified in datasheet
• Maximum junction temperature (Tj max), thermal resistance (RθJC, RθJA): Not specified in datasheet

Application Fit: Where the IPP65R110CFDAAKSA1 Excels

Automotive On‑Board Chargers (OBC)

The 650 V rating and superjunction structure make the Infineon IPP65R110CFDAAKSA1 a natural candidate for OBC primary stages, including PFC and high‑frequency isolation. The fast body diode helps during commutation events, aiding efficiency and reliability.

High‑Voltage Automotive DC‑DC Converters

In HV DC‑DC conversion (e.g., traction battery interfacing auxiliary rails), the combination of low Rds(on) and fast recovery behavior can reduce switching losses and thermal stress, improving overall converter density and efficiency.

PFC and Auxiliary Power Supplies

PFC front ends in automotive or industrial supplies benefit from the device’s high‑voltage capability and CFD body diode behavior under hard‑switching conditions. Auxiliary high‑voltage rails in vehicles or off‑board service equipment can also leverage the same advantages.

General High‑Voltage Automotive Switching

Where reliability and long lifetime are required—lighting control, heater drives, or auxiliary inverters—the AEC‑Q101 qualification and robust TO‑220‑3 package provide confidence in demanding environments.

Design and Integration Considerations

• Gate Drive Strategy: Superjunction MOSFETs can deliver excellent efficiency when driven with appropriate gate resistors and clean gate loops. Tune gate resistance for EMI and switching loss balance; confirm gate voltage limits in the datasheet.
• Hard‑Commutation Handling: The fast body diode (CFD) in the CoolMOS CFD7A series targets hard‑commutation robustness. Validate reverse‑recovery dynamics and di/dt in your specific topology.
• Thermal Management: With 31.2 A Id and 110 mΩ Rds(on), thermal design is critical. Use an adequately sized heatsink, employ thermal interface materials, and consult the device’s thermal metrics and derating curves in the datasheet.
• Layout Practices: Minimize parasitic inductance in the power loop and gate loop; use short, wide traces for high current paths. Implement proper Kelvin‑source referencing where possible to improve switching repeatability.
• Protection and SOA: Incorporate snubbers, clamping, or active protection as needed for transients. Verify SOA and avalanche energy limits against system events.
• Parallel Operation: If paralleling devices, ensure current sharing through layout symmetry and consider gate resistor matching. Consult the datasheet for temperature coefficients and dynamic sharing behavior.

Package, Pinout, and Mounting

• Package: TO‑220‑3 (3 leads + tab)
• Mounting: Through hole with standard leads suitable for wave or selective soldering
• Heatsinking: The metal tab provides the primary thermal path to the heatsink.

Note: In many TO‑220 MOSFETs, the tab is electrically connected to the drain. Always verify the exact tab connection, creepage/clearance, and insulation requirements in the official datasheet and your safety standards.

Lifecycle, Compliance, and Quality

• Lifecycle Status: Active (per manufacturer-supplied status)
• Automotive Qualification: AEC‑Q101
• Environmental: RoHS Compliant
• Originating Manufacturer: Infineon Technologies AG

These attributes support compliance and long‑term availability planning in regulated automotive programs.

Sourcing Notes and Ordering Guidance

• Manufacturer Part Number (MPN): IPP65R110CFDAAKSA1
• Series: CoolMOS CFD7A Automotive
• Package/Case: TO‑220‑3 (3 leads + tab)
• Packaging: Tube

Best practices for procurement:

• For automotive programs, keep traceability: source from authorized channels and request AEC‑Q101 qualification documentation as needed.
• Verify date codes and storage conditions for moisture sensitivity and handling, even for through‑hole packages.
• Consider maintaining a second‑source strategy; if alternates are required, match voltage rating, Rds(on), current capability, package, and AEC‑Q101 status.

Approved Alternates and Cross‑References

• Approved alternates: None listed in the provided data
• Policy notes: Use only AEC‑Q101‑qualified alternates with equivalent voltage, current, Rds(on), and package for automotive designs

If substitutions are needed, consult Infineon’s portfolio or vetted automotive‑grade equivalents that meet the same electrical and qualification criteria. Always re‑verify thermals, SOA, and switching behavior in your end topology.

Frequently Asked Questions (FAQs)

• What is the brand and series?

• Infineon Technologies, CoolMOS CFD7A Automotive series.

• What are the key ratings of the IPP65R110CFDAAKSA1?

• Vds = 650 V, Id = 31.2 A, Rds(on) = 110 mΩ (N‑channel, single configuration).

• Is this device automotive qualified?

• Yes, AEC‑Q101 qualified.

• What package does it come in?

• TO‑220‑3 (3 leads + tab), through‑hole mounting; packaging is Tube.

• Is it RoHS compliant?

• Yes, RoHS compliant.

• Does it have a fast body diode?

• Yes. It’s a CoolMOS CFD7A device with a fast body diode (CFD).

• Is it suitable for OBC and HV DC‑DC converters?

• Yes, those applications are explicitly targeted for this device series and rating.

• What about gate charge, threshold voltage, or avalanche ratings?

• Not specified in the provided data. Refer to the official datasheet for exact values and test conditions.

• Is it a logic‑level gate MOSFET?

• Not specified in the provided data. Confirm gate threshold and recommended Vgs drive in the datasheet.

• Are there recommended drop‑in replacements?

• None are provided here. If you must qualify alternates, ensure matching Vds, Id, Rds(on), package, and AEC‑Q101 status, and re‑validate in your design.

Resources

• Product page and datasheet: https://www.infineon.com/cms/en/product/power/mosfet/650v-coolmos/ipp65r110cfda/

Summary

The Infineon Technologies IPP65R110CFDAAKSA1 CoolMOS CFD7A Automotive MOSFET delivers a compelling mix of efficiency, robustness, and qualification for high‑voltage automotive power electronics. Its 650 V rating, 31.2 A current capability, 110 mΩ Rds(on), and fast body diode behavior address the performance needs of OBCs, HV DC‑DC converters, and PFC/auxiliary supplies. The TO‑220‑3 package eases heatsinking and serviceability, while AEC‑Q101 and RoHS compliance streamline adoption in regulated automotive environments.

For complete electrical limits, thermal metrics, and dynamic switching characteristics, consult the official Infineon datasheet and product page. By aligning drive conditions, thermal design, and protection elements with your topology, the IPP65R110CFDAAKSA1 can help you achieve high efficiency and dependable operation across demanding automotive power platforms.